Cover image for A study of s new power semiconductor insulated gate bipolar  transistor (IGBT) characteristics and its application to automative ignition
Title:
A study of s new power semiconductor insulated gate bipolar transistor (IGBT) characteristics and its application to automative ignition
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Miramare-Trieste: IAEA, 1995
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PSZ JB 30000003973595 TK7871.96.B55 R32 1995 Open Access Book
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